MIS STORAGE ITEM MANUFACTURING TECHNIQUE Russian patent published in 1994 - IPC

FIELD: manufacture of semiconductor devices. SUBSTANCE: MIS storage item manufacturing technique involves growing of thin tunnel layer of thermal oxide on silicon substrate followed by deposition of silicon nitride from gas phase on it as result of reaction of silane and ammonia in low-pressure reactor followed by application of conducting electrode; deposition of silicon nitride layer is conducted at 0.2 to 0.4 proportion of volume consumption of silane and ammonia and at partial pressure of water vapors between 50 and 200 mlm mlm^-1. EFFECT: increased number of MIS storage items change-over cycles. 5 dwg