FIELD: microelectronics and nanoelectronics.
SUBSTANCE: proposed method for producing dielectric layer on very large-scale integrated circuits, field-effect nanotransistors, and fiber-optic communication devices includes substrate coating with initial forming layer followed by oxidation in oxygen plasma. Material used for initial forming layer is titanium applied by vacuum evaporation to form layer of 5 - 10 nm in thickness. Oxidation is effected in oxygen plasma at oxygen pressure of 0.8 - 1.0 T, high-frequency discharge power of 100 - 400 W, for 2 - 64 min. Used as substrate for the purpose is semiconductor wafer, such as that of silicon group 4. TiO2 dielectric layers produced by this method are noted for reduced thickness, enhanced smoothness and continuity, as well as compatibility with standard industrial technology of very large-scale integrated circuit production.
EFFECT: reduced thickness of layers, enhanced yield.
9 cl, 2 dwg
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