FIELD: cryogenic radio engineering. SUBSTANCE: process consists in sputtering of target of specified composition with beam of ions of inert gas. Negative ions of oxygen with energy 1.5-10.0 eV which are released from target in process of its bombardment with ions of argon are collected on growing film in process of sputtering. Ions of oxygen are collected, for instance, by their feeding to growing film of positive voltage. EFFECT: simplified and reduced cost of technological process, increased critical temperature of manufactured films.
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