MICROELECTRONIC S H F TRIODE Russian patent published in 1995 - IPC

Abstract RU 2046439 C1

FIELD: microelectronics. SUBSTANCE: microelectronic SHF triode presents axially symmetric structure with cylindrical cathode and anode placed on one axis. Matrix autoemission cathode is placed on butt of cathode cylinder. For minimization of triode cathode and anode oscillatory systems are manufactured in the form of sections of wire spiral axial slow-wave system applied on dielectric coats encircling cylindrical anode and cathode. One of leads of each spiral is coupled to proper electrode, the other one - to external circuit. EFFECT: facilitated manufacture. 2 dwg

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RU 2 046 439 C1

Authors

Sazonov V.P.

Dates

1995-10-20Published

1993-03-10Filed