FIELD: vacuum microelectronics.
SUBSTANCE: technology for manufacturing vacuum microelectronics elements with field emission cathodes. Method consists in forming a structure in form of a two-stage well on a conductive silicon substrate, sequentially depositing a two-layer nanocrystalline diamond (NCD) and aluminium films on this structure, removing aluminium from the inner surface of the well, anisotropic etching of the NCD film and silicon inside the wells, and forming a tubular cathode from deposited NCD film and a grid electrode made of aluminium film.
EFFECT: technical result is an increase in the accuracy of reproduction of the geometric dimensions of the cathode assembly, the stability of the current and the service life of the cathode assembly in a technical vacuum.
12 cl, 2 dwg
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Authors
Dates
2023-04-18—Published
2022-11-07—Filed