HYBRID INTEGRAL VACUUM MICROSTRIP DEVICE Russian patent published in 1997 - IPC

FIELD: electronic devices. SUBSTANCE: crystal contact plates are connected directly to metal-coating pattern. Face side of circuit board has recess which is located under crystal. Depth of recess is in range of 5-150 mcm; anode is located at its bottom. In addition circuit pattern which is located outside of contact plates of crystal is arranged in recesses on face side of circuit board. Back side of circuit board has metal-coated recess which is located under anode and is filled with current-conducting material. Recess in circuit board may have two stages and metal-coated hole in bottom of upper part. Bottom of lower part of hole is filled with metal. EFFECT: increased functional capabilities. 7 cl, 4 dwg