FIELD: opticoelectronic instrumentation engineering. SUBSTANCE: etching solution includes hydrogen chloride, acetic acid and water. It can be used for etching dielectric layers on semiconductor substrate through photoresistive mask. Composition of solution, per cent by mass, is: hydrogen chloride 0.2-4.0; water 0.4-10.0, acetic acid 90.0-99.4. EFFECT: improved efficiency of formation of multilayer thin-film structures. 1 tbl
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