METHOD OF SWITCHING ON OF FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION Russian patent published in 1995 - IPC

Abstract RU 2046455 C1

FIELD: microelectronics. SUBSTANCE: method of switching on of field-effect transistor with controlling p-n-junction lies in feed on input signal to gate of transistor, of bias voltage to drain and source and in provision of operation of transistor in linear region of volt-ampere characteristics. Values of bias voltage of drain and source are chosen so that junction "gate-source" is biased in forward direction and junction "gate-drain" in reverse one. Realization of certain proportion of voltage values provides for equality by absolute value of currents "gate-source" and "gate-drain" and their mutual compensation. EFFECT: improved reliability of method. 2 dwg, 1 tbl

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RU 2 046 455 C1

Authors

Dvornikov Oleg Vladimirovich[By]

Prosandeev Dmitrij Evgen'Evich[By]

Volodkevich Aleksandr Antonovich[By]

Dates

1995-10-20Published

1992-04-13Filed