METHOD OF SWITCHING ON OF FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: method of switching on of field-effect transistor with controlling p-n-junction lies in feed on input signal to gate of transistor, of bias voltage to drain and source and in provision of operation of transistor in linear region of volt-ampere characteristics. Values of bias voltage of drain and source are chosen so that junction "gate-source" is biased in forward direction and junction "gate-drain" in reverse one. Realization of certain proportion of voltage values provides for equality by absolute value of currents "gate-source" and "gate-drain" and their mutual compensation. EFFECT: improved reliability of method. 2 dwg, 1 tbl