FIELD: microelectronics. SUBSTANCE: method of switching on of field-effect transistor with controlling p-n-junction lies in feed on input signal to gate of transistor, of bias voltage to drain and source and in provision of operation of transistor in linear region of volt-ampere characteristics. Values of bias voltage of drain and source are chosen so that junction "gate-source" is biased in forward direction and junction "gate-drain" in reverse one. Realization of certain proportion of voltage values provides for equality by absolute value of currents "gate-source" and "gate-drain" and their mutual compensation. EFFECT: improved reliability of method. 2 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
FIELD-EFFECT TRANSISTOR WITH CONTROL p-n JUNCTION | 1991 |
|
SU1812898A1 |
FIELD-EFFECT TRANSISTOR WITH CONTROL P-N JUNCTION | 1991 |
|
SU1828340A1 |
FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION | 1991 |
|
SU1828339A1 |
FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION | 1992 |
|
RU2024996C1 |
SOURCE FOLLOWER | 1992 |
|
RU2024111C1 |
FIELD-EFFECT TRANSISTOR BASED INVERTER WITH CONTROL JUNCTION | 0 |
|
SU741473A1 |
LOGIC GATE | 0 |
|
SU1817239A1 |
SEMICONDUCTOR DEVICE | 0 |
|
SU858493A1 |
CASCODE AMPLIFIER OF TYPE GENERAL DRAIN - GENERAL BASE | 2016 |
|
RU2617930C1 |
SWITCHING DEVICE WITH SERIES CONNECTION OF JUNCTION FIELD-EFFECT TRANSISTORS | 2011 |
|
RU2550551C2 |
Authors
Dates
1995-10-20—Published
1992-04-13—Filed