FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION Russian patent published in 1994 - IPC

FIELD: semiconductor devices. SUBSTANCE: field-effect transistor with controlling p-n junction has semiconductor substrate of first type of conductance, semiconductor layer of second type of conductance formed on its surface insulating region of first type of conductance, linking to substrate and segregating isolated region in semiconductor layer of second type of conductance where regions of source and drain of first type of conductance, n regions of gate of first type of conductance are formed (where n=2,3...) to contact isolated region. N regions of gate are so manufactured that they contact isolated region in one point only. EFFECT: facilitated manufacture of device meant for amplified generation of electric signals. 5 dwg