SOURCE FOLLOWER Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: source follower has main field-effect transistor with control p-n junction made on n-type semiconductor substrate whose surface is covered with n-type layer wherein insulating region is isolated by means of n-type insulating region and source, drain, and gate regions are formed there; additional transistor formed in isolated region has its source region contacting on one side insulating region and on other side, gate region; main transistor source region functions as its drain; source, gate, and insulating region have common resistive contact. EFFECT: improved design. 3 dwg, 1 tbl