FIELD: microelectronics. SUBSTANCE: this field-effect transistor includes protection element manufactured from part of substrate directly bordering on central part of source and/or drain. EFFECT: reduced geometrical dimensions, exclusion of dependence of protection voltage on cutoff voltage. 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| FIELD-EFFECT TRANSISTOR WITH CONTROLLING P-N JUNCTION | 1992 |
|
RU2024996C1 |
| SOURCE FOLLOWER | 1992 |
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RU2024111C1 |
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SU1812898A1 |
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SU1828340A1 |
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| SEMICONDUCTOR DEVICE | 0 |
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| FIELD-EFFECT P-N TRANSISTOR AND ITS MANUFACTURING PROCESS | 1992 |
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| BICMOS DEVICE AND PROCESS OF ITS MANUFACTURE | 1996 |
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RU2106719C1 |
| HIGH-POWER FIELD TRANSISTOR WITH INSULATED GATE | 0 |
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SU1621817A3 |
