FIELD-EFFECT TRANSISTOR WITH CONTROL P-N JUNCTION Russian patent published in 1996 - IPC

FIELD: electronic instruments. SUBSTANCE: device has substrate, on which surface second-type semiconductor layer is generated, insulated first-type area which touches substrate, source and drain areas which have second-type conductance and are generated in second-type semiconductor layer, areas of first and second gates which have first-type conductance. Area of source has galvanic connection to area of second gate. substrate is made from first-type semiconductor material which doping is greater than doping of second-type semiconductor layer. First gate is designed as closed area which embraces area of source; second gate area contacts to insulating area and closes circuit around drain area. EFFECT: increased dynamic voltage between drain and source, improved electric characteristics.