FIELD-EFFECT TRANSISTOR WITH CONTROL p-n JUNCTION Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: semiconductor layer of second type of conductivity is formed on semiconductor layer of first type of conductivity. Insulated region is formed by means of region of first type of conductivity joined with substrate; insulated region accommodates source, gate, and drain regions of field-effect transistor. Source is made in the form of two regions one of which is surrounded by gate region and is of stepped configuration forming (n+1) horizontal channels, LL_p(n-1) thick, at L_p1<L_p2<...<L_p(n-1) and L_p1>2W_0.3, where W_0.3 is p-n junction spatial region width formed by regions of first type of conductivity of gate and insulating region with semiconductor layer of second type of conductivity. Second source region is located in closed loop formed by second gate region connected to insulating region. EFFECT: provision for implementing n fractures - (n+1) sections with different slope. 5 dwg