INTEGRAL TENSION TRANSDUCER Russian patent published in 1995 - IPC

FIELD: measuring devices. SUBSTANCE: device is designed as single crystal having silicon substrate with n-type of conductance and tension concentrator. Transversal recess is used as tension concentrator. Its working surface contains p-type diffusion tension-sensitive resistors which are manufactured by means of integral technology. Units of bridge circuit are located on contact surfaces outside of concentrator. Each tension-sensitive resistor has two identical parts, which are connected in series by metal wire and which are position in symmetry about middle line of concentrator. Each part of tension- sensitive resistor is surrounded by high-dope area of n-type. Working surface has at least one ohmic contact to crystal, which is connected by metal wire to separate contact surface. EFFECT: increased functional capabilities. 2 cl, 4 dwg