FIELD: electric-optics. SUBSTANCE: multijunction semiconductor device has p-type layer, n-type layer which is made of amorphous semiconductor or of amorphous semiconductor with inclusions of monocrystals, and layer which prevents diffusion. Diffusion-locking layer is disposed between p- and n-type layers; and has thickness of 5 to 500 Angstroms, preferably 10-200 Angstroms. Semiconductor device described may reduce deterioration of quality caused by diffusion of atoms of doping material, which is present in p- and n-type layer, into the other layer. EFFECT: improved quality of energy conversion. 1 dwg, 3 tbl
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