FIELD: optoelectronics. SUBSTANCE: heat-resistant thin-film photoelectric transducer has p-i-n structure, electrode, and diffusion blocking layer between semiconductor and at least one electrode. Blocking layer of 
thickness is formed by depositing layer of metal of VIB group from periodic system of elements or metal alloy containing over 50% of VIB group metal on n-silicon layer followed by its annealing for 1.5 to 2 h at 150 to 200 C. EFFECT: improved quality due to the fact that diffusion of metal or metal compound from electrode to semiconductor is eliminated. 2 cl, 1 dwg, 1 tbl
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