PLASMOCHEMICAL ETCHING PLANT Russian patent published in 1995 - IPC

Abstract RU 2051441 C1

FIELD: electronic engineering. SUBSTANCE: plant has working chamber, etching mixer, vacuum system, and cleaning device. The latter has reaction chamber placed between two high-frequency oscillators one of which is connected to vacuum system output and other oscillator, to oxygen source. EFFECT: improved design. 2 dwg

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RU 2 051 441 C1

Authors

Gominjuk S.B.

Dates

1995-12-27—Published

1991-03-26—Filed