METHOD OF PROCESSING SURFACE OF SILICON CARBIDE PLATES IN LOW-TEMPERATURE INDUCTIVELY COUPLED PLASMA Russian patent published in 2019 - IPC H01L21/302 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics, particularly, to silicon carbide (SiC) surface processing. It can be used for creation of smooth surfaces produced during plasma-chemical etching process. Structures created on such surfaces are widely used for earthing contacts when making microwave transistors. Technical result is achieved by a method of processing the surface of silicon carbide plates in low-temperature inductively coupled plasma, involving plasma-chemical etching, wherein the substrate holder is additionally heated to temperature selected from the range [473–523] K, which enables to simultaneously perform the polishing process of the silicon carbide plate surface with the etching process.

EFFECT: enabling combination of plasmochemical etching and polishing operation into a single technological process.

4 cl, 2 dwg, 1 tbl