FIELD: microelectronics. SUBSTANCE: method of plasma-chemical pickling includes positioning of treated sample on electrode-substrate holder in reaction chamber, coating of at least part of working elements of reaction chamber with halogen-containing solid substance, excitation of plasma in atmosphere of residual gases of reaction chamber under fixed pressure and pickling with the aid of halogen-containing source in which capacity only halogen-containing solid substance of coating is employed. Realization of method enable reconstruction of pickling process to be enhanced, equipment and technology to be simplified and ecology of process to be improved. EFFECT: simplified equipment and technology, improved ecology of process. 4 tbl
| Title | Year | Author | Number |
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