FIELD: electricity.
SUBSTANCE: composition of gas mixture to form tantalum nitride metal gate in plasma is characterised by plasma generation in gas mixture containing boron trichloride and oxygen.
EFFECT: exclusion of tantalum nitride side etching, improvement of etching precision, increase in productivity due to through etching of tantalum nitride and gate dielectric from hafnium oxide up to silicone in one stage, decrease in defect formation and increase of fit products output.
2 cl, 15 dwg, 1 tbl
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