FIELD: microelectronics.
SUBSTANCE: methods for plasma-chemical etching. Can be used to create ground contacts for SiC-based power electronics. The invention is aimed at creating a method for etching silicon carbide in a low-temperature inductively coupled plasma in a mixture of sulfur hexafluoride, oxygen and argon gases, in which the substrate holder is additionally cooled to a temperature in the range [25; -50]°C, which avoids the effect of micromasking during the etching process.
EFFECT: increase in the yield of suitable products.
1 cl, 3 dwg
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