METHOD FOR PLASMA-CHEMICAL ETCHING OF HETEROSTRUCTURES BASED ON INP Russian patent published in 2020 - IPC H01L21/3065 

FIELD: technological processes.

SUBSTANCE: invention relates to material processing and can be used in production of components of solid-state electronics, microwave electronics, optoelectronics and radio-photonics. Method of plasma-chemical etching of heterostructures based on InP involves placing on substrate holder in vacuum chamber of heterostructure InAlAs/InGaAs, deposited on substrate InP with formed on it dielectric mask, supply of plasma-forming mixture to vacuum chamber at residual pressure of 5–30 mTorr, plasma ignition by power supply 400–800 W from HF-generator to source of inductively coupled plasma and negative displacement to substrate from HF-generator with power of 100–250 W, and etching of heterostructures, wherein the etching process consists of two steps, wherein at the first step, plasma is ignited, with pulse duration of 20–25 s, and at second step, products of reaction of gas mixture radicals are removed with substrate material from vacuum chamber, as well as heat stabilization of samples with duration of 30–35 s, wherein both stages are repeated with given number of cycles.

EFFECT: method for plasma-chemical etching of heterostructures based on InP according to the invention is aimed at reducing the time of making the structure more than two times and reducing the depth of the disturbed layer of structure to 5 nm, which makes it possible to increase transmittance in 1_5 times, considerably reducing loss of optical radiation in electro-optical modulator.

1 cl, 3 dwg