HIGH-POWER S H F TRANSISTOR Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: high-power SHF transistor has transistor crystals with transistor structures placed on metal flange of package which is common lead of collector or drain electrodes of transistor crystals. It also has two leads of other electrodes of transistors arranged on both sides of flange of package and connected by rows of conductors to proper electrodes of transistor structures. There is inserted additional lead positioned on side of one of leads of other electrodes in symmetry with symmetry axis of transistor and connected by row of conductors to electrodes of transistor structures coupled to other lead of transistor. EFFECT: provision for increase of SHF power. 5 dwg