HIGH-POWER S H F TRANSISTOR Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: high-power SHF transistor has two rows of semiconductor crystals with transistor structures put on metal flange of package - common lead-out of collector or drain electrodes of transistor structures, first lead-out of transistor, second and third leads-out of transistor corresponding to electrodes of transistor structures located on both sides of package flange, connecting conductors and row of passive elements arranged between rows of semiconductor crystals in parallel to them. Each passive element is manufactured in the form of insulating layer having termination pads located between like electrodes of transistor structures of rows of crystals and coupled to them and proper lead-out of transistor by connecting conductors. Apart from mentioned elements high-power transistor has additional lead-out arranged on side of second lead- out of transistor in symmetry with regard to symmetry axis of transistor and connected to termination pads which are linked to third lead-out of transistor located on opposite side. EFFECT: facilitated manufacture, improved stability of operational characteristics. 2 cl, 4 dwg