HIGH-POWER S H F TRANSISTOR (VERSIONS) Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: high-power SHF transistor includes row of semiconductor crystals with transistor structures placed on metal flange of package - common lead-out of collector or drain electrodes of transistor structures, first lead-out of transistor, second and third leads-out of transistor corresponding to second and third electrodes of transistor structures and arranged on both sides of flange of package. Second lead-out of transistor is connected by row of connecting conductors to second electrodes of transistor structures. There is strip line positioned between third lead-out of transistor and row of semiconductor crystals and in parallel to the latter divided by gaps into equal sections interconnected by resistors. Each section of strip line is linked by connecting conductors to third lead-out of transistor and to third electrodes of opposite transistor structures. It has length less than half-length of wave of electromagnetic oscillations in line on upper frequency of working range. Each resistor has resistance value equal to (0.2-5.0) • XL where XL is inductive resistance of conductors connecting line section to third lead-out of transistor on central frequency of working range. In accordance with second version high-power SHF transistor has two strip lines arranged on both sides of row of semiconductor crystals in parallel to it. EFFECT: increased output power and efficiency of transistor. 4 cl, 5 dwg