HIGH-POWER MICROWAVE TRANSISTOR Russian patent published in 2017 - IPC H01L29/73 

FIELD: electronics.

SUBSTANCE: invention can be used for making a high-power microwave transistor. Essence of invention lies that high-power microwave transistor includes ceramic housing with a metal flange and two strip-line leads on sides of a ceramic structure, one or more parallel-connected transistor chips, chips of capacitors of internal matching circuits, multiple rows of connecting wire conductors, connecting terminal pads on transistor chips and capacitor chips with each other and with input and output leads of transistor, wherein flange serves as common electrode of transistor, and between each pair in a row of main connecting leads there are screen conductors, wherein inside ceramic structure of housing there is a metal frame with vertical walls, at bottom connected to housing flange, at top having a level slightly below level of transistor outputs for connection of top ends of said screening conductors, lower ends of screening conductors are connected directly to flange of housing near transistor chip.

EFFECT: technical outcome is possibility of expansion of working frequency band and increasing operational stability.

5 cl, 4 dwg