HIGH-POWER S H F TRANSISTOR (VERSIONS) Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: high-power SHF transistor has two parallel rows of semiconductor crystals with transistor structures positioned on metal flange of package - common lead-out of collector or drain electrodes of transistor structures, first lead-out of transistor, second and third leads-out of transistor corresponding to second and third electrodes of transistor structures arranged on both sides of flange of package, row of passive elements located between rows of semiconductor crystals, one strip line placed between third lead-out of transistor and row of semiconductor crystals in parallel to the latter and divided by gaps into equal sections interconnected by resistors. Each passive element is produced in the form of insulating layer having termination pads arranged between like electrodes of transistor structures of rows of crystals and connected to them by conductors. Termination pads connected to second electrodes are linked to second lead-out of transistor and termination pads connected to third electrodes are linked to opposite sections of strip line which are connected to third lead-out of transistor. Length of each section of strip line is less than half-length of oscillation wave on upper frequency of working range and resistance value of resistor equals (0.2-5.0)XL where XL is inductive resistance on central frequency of working range of conductors connecting section of strip line to second lead-out of transistor. In agreement with second version two strip lines are located on both sides of row of semiconductor crystals and are connected to first and second leads-out of transistor and like electrodes of opposite transistor structures correspondingly. EFFECT: increased output power and efficiency of transistor. 2 cl, 5 dwg