HIGH-POWER BIPOLAR MICROWAVE TRANSISTOR Russian patent published in 2005 - IPC

FIELD: designing and manufacturing high-power microwave transistors.

SUBSTANCE: proposed high-power three-contact amplifying microwave transistor has transistor chips carrying transistor structures disposed on metal flange of case that functions as collector contact; input emitter and output base contacts connected by means of conductors to respective electrodes of transistor structures; base electrodes of transistor structures are additionally connected on emitter contact side through strip line section of width W and isolating capacitor to collector contact; maximal distance h_max of emitter conductors from strip line section should meet relationship h_max ≤ 0.2. Transistor has low internal feedback and dispenses with ceramic heat-conducting chip holder made of high-cost beryllium ceramic.

EFFECT: simplified design and reduced cost of transistor.

1 cl, 1 dwg