FIELD: electronics. SUBSTANCE: precipitation is initiated from gas mixture by single spark discharge in the course of 0.001-0.01 s. Gas mixture used in process contains 0.006-0.48 volumetric per cent of composition type SiHnCl4-n, hydrogen and oxygen in proportion 1-4:4. EFFECT: enhanced productivity of process. 2 cl, 1 dwg, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| ZINC OXIDE FILM PRODUCING METHOD | 0 |
|
SU1775491A1 |
| METHOD OF MAKING SILICON DIOXIDE FILM | 2008 |
|
RU2398913C1 |
| METHOD OF PRODUCING HETEROEPITAXIAL SILICON CARBIDE FILMS ON SILICON SUBSTRATE | 2012 |
|
RU2521142C2 |
| DEVICE FOR EMISSION SPECTRAL ANALYSIS | 1994 |
|
RU2095790C1 |
| PROCESS FOR PREPARING METHYL FORMATE | 1993 |
|
RU2126788C1 |
| METHOD OF MAKING BORON-CONTAINING FILMS | 2006 |
|
RU2378739C2 |
| METHOD FOR STEAM-PHASE AND CHEMICAL PLASMA STIMULATION OF GAS-SENSING FILM DEPOSITION | 1994 |
|
RU2087048C1 |
| CVD REACTOR FOR SYNTHESIS OF HETEROEPITAXIAL SILICON CARBIDE FILMS ON SILICON SUBSTRATES | 2021 |
|
RU2767098C2 |
| METHOD FOR PRODUCING PART INCORPORATING SILICON SUBSTRATE WHOSE SURFACE IS COVERED WITH SILICON CARBIDE FILM | 2005 |
|
RU2286617C2 |
| CVD-REACTOR AND METHOD OF SYNTHESIS OF HETERO-EPITAXIAL FILMS OF SILICON CARBIDE ON SILICON | 2008 |
|
RU2394117C2 |
