METHOD FOR STEAM-PHASE AND CHEMICAL PLASMA STIMULATION OF GAS-SENSING FILM DEPOSITION Russian patent published in 1997 - IPC

Abstract RU 2087048 C1

FIELD: analytical instrumentation engineering; gas sensors. SUBSTANCE: substrate is placed in reactor, the latter is pre-evacuated, substrate is heated to 280-300 C, reactor is filled with mixture of reactive gases (oxygen and tetraethyl tin). Proportion of oxygen to tetraethyl tin by volume is 0.2-3 to 1; substrate is exposed to high-frequency discharge of density from 0.1 to 0.4 W/sq.cm. EFFECT: improved sensitivity of film obtained to gases. 6 cl, 1 tbl

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RU 2 087 048 C1

Authors

Gusev V.K.

Kondrashevskij V.P.

Samokhvalov R.V.

Donina M.M.

Dates

1997-08-10Published

1994-07-04Filed