CVD-REACTOR AND METHOD OF SYNTHESIS OF HETERO-EPITAXIAL FILMS OF SILICON CARBIDE ON SILICON Russian patent published in 2010 - IPC C30B25/02 C30B25/14 C30B29/36 C23C16/455 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of hetero-epitaxial structures of silicon carbide on silicon that can be used as substrates in making solid-state components to be operated at high radiation and temperature. Reactor for synthesis of hetero-epitaxial silicon carbide films on silicon substrate via gas plating comprises quartz tube with container 5 accommodating substrate 1, heaters 6 with resistance or induction heating and appliances to feed film components and hydrogen into synthesis zone. Note here that hydrogen feed appliance includes active hydrogen and represents tube 9 arranged in top and bottom walls of container 5 and having holes directed along normal line to substrate 1. Note also that film component feed device is arranged in evaporator 10 with gas control ring with holes through which said components are fed into synthesis zone parallel with substrate. Mind that said feed appliances are isolated. Peculiarity of said reactor consists in that heaters and substrates are arranged parallel each other to make sandwich. Proposed design allows efficient use of radiation from every heater. Silicon carbide film synthesis is performed at pressure varying from 5·10² to 5·10^-2 Pa on the surface of at least two silicon substrates at 800 to 1380°C, and hydrogen temperature exceeding that of substrate and film components by at least 100°C.

EFFECT: synthesis of high-quality hetero-epitaxial mono-crystal silicon carbide films on silicon.

5 cl, 5 ex, 3 dwg