FIELD: manufacture of semiconductor materials for semiconductor devices.
SUBSTANCE: proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface using carbon deposited from carbon-containing material onto heated substrate surface; carbon is deposited on substrate surface under conditions which do not provide for silicon carbide formation and then such conditions for silicon carbide synthesis are set.
EFFECT: facilitated procedure.
12 cl, 5 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING PART INCORPORATING SILICON SUBSTRATE WHOSE SURFACE IS COVERED WITH SILICON CARBIDE FILM | 2005 |
|
RU2286616C2 |
| METHOD OF PRODUCT MANUFACTURE CONTAINING SILICON SUBSTRATE WITH FILM FROM CARBIDE OF SILICON ON ITS SURFACE | 2007 |
|
RU2352019C1 |
| ARTICLE WITH SILICON CARBIDE COATING AND METHOD FOR MANUFACTURING OF ARTICLE WITH SILICON CARBIDE COATING | 2018 |
|
RU2684128C1 |
| METHOD FOR MANUFACTURE OF PRODUCT CONTAINING SILICEOUS SUBSTRATE WITH SILICON CARBIDE FILM ON ITS SURFACE | 2008 |
|
RU2363067C1 |
| METHOD FOR GAS-PHASE CARBIDISATION OF SURFACE OF MONOCRYSTALLINE SILICON OF ORIENTATION (111), (100) | 2015 |
|
RU2578104C1 |
| METHOD OF OBTAINING PHOTOSENSITIVE STRUCTURE | 2006 |
|
RU2330352C1 |
| METHOD OF PRODUCTION OF FIBER-REINFORCED CARBON-SILICON CARBIDE COMPOSITE MATERIAL | 2006 |
|
RU2337083C2 |
| METHOD OF MANUFACTURING ARTICLES FROM CARBON-SILICON CARBIDE COMPOSITE MATERIAL AND CARBON-SILICON CARBIDE COMPOSITE MATERIAL | 1992 |
|
RU2084425C1 |
| METHOD OF MAKING SILICON CARBIDE FILMS ON SILICON SUBSTRATE | 2007 |
|
RU2341847C1 |
| HEAT SINK ELEMENT AND METHOD OF ITS MANUFACTURE | 2019 |
|
RU2806062C2 |
