METHOD OF MAKING BORON-CONTAINING FILMS Russian patent published in 2010 - IPC H01L21/316 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to the technology of making semiconductor devices, specifically to methods of making films containing boron on the surface of semiconductor materials. The method of making borosilicate films involves depositing films on heated silicon substrates from a gaseous phase containing boron compounds. The boron source used is a solid planar source - boron nitride. Films are deposited from the gaseous phase which additionally contains nitrogen, oxygen and hydrogen in the following flow rate of said components: N₂-240 l/h, O₂-120 l/h, H₂-7.5 l/h, and temperature of the substrates is kept in the 700-800°C range.

EFFECT: reduced working temperature.

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