QUANTUM-INTERFERENCE TRANSISTOR Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: invention relates to integrated circuits wide application. Insulating backing of quantum-interference transistor carries interference element in the form of section of quantum wire connected to current leads-in and controlling electrode in the form of periodic comb oriented along section of wire and connected to current lead-in. Parameters of periodic potential along axis of interference element, minimal value of transmission coefficient, energy width of prohibited slit in transmission coefficient with center at Fermi level and by this - value of working temperature are set by parameters of comb. With bias switched on controlling electrode periodically modulates potential in interference element. If periodic potential is less than Fermi energy counted from bottom of working subzone of conductance of conductor of interference element then there emerge above-barrier reflection at each jump of potential and multibeam interference of reflected waves. EFFECT: enhanced functional reliability and stability. 4 dwg