HIGH-VOLTAGE HIGH-TEMPERATURE QUICK-ACTING THYRISTOR WITH FIELD CONTROL Russian patent published in 2013 - IPC H01L29/745 

FIELD: electricity.

SUBSTANCE: in a high-voltage high-temperature quick-acting thyristor with field control, comprising an anode area from a highly alloyed substrate of p⁺-type conductivity, a basic area from serial epitaxial layers of n^--type and high-resistance n⁺-type of conductivity, a gate area arranged from local interrelated areas of p⁺-type conductivity in a near-surface volume, also in grooves of the basis area, a cathode area made of local interrelated shallow areas of n⁺-type conductivity arranged between gate p⁺-areas, the thyristor structure is made based on gallium arsenide, at the same time between the anode and basic areas of the structure there are epitaxial layers of p⁺-p-p^--type with a sharp, smooth, sharp transition of differential concentration of acceptor and donor admixtures from at least 10¹⁹ cm^-3 to 10¹¹ cm^-3 and below, and the epitaxial i - area with differential concentration of acceptor and donor admixtures by not more than 10¹¹cm^-3.

EFFECT: invention makes it possible to increase efficiency of a thyristor with field control several times, to increase working temperature of a crystal 1,5-2 times, radiation resistance.

3 cl, 3 dwg