LOW-VOLTAGE TEMPERATURE-COMPENSATED ZENER DIODE AND ITS MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: semiconductor devices. SUBSTANCE: proposed voltage regulator diode designed for tight regulation of radio equipment operating voltage under varying ambient temperature conditions has doped silicon chip carrying main, compensating, and barrier p-n junctions, insulating layers, contact lugs, and metal contact layers. Novelty is that chip is made of silicon doped with p-type base impurity (boron) and that main, compensating, and barrier p-n junctions are arranged between p-type base silicon and diffusion layers of silicon doped with p-type impurities; metal contact layers are located directly on silicon chip surface inside windows within insulating layers above regions accommodating main and compensating p-n junctions; contact lugs are made of metal and mounted on top of metal contact layers. Manufacturing process includes manufacture of silicon base chip with main, compensating, and barrier p-n junctions, insulating layers, contact lugs, and metal contact layers, as well as manufacture of two metal leads and hermetic sealing of chip and metal leads in glass case. Novelty is that p-type silicon is used as base crystal, barrier and compensating p-n junctions are formed in base silicon by diffusing p-type doping impurity (phosphor), and main p-n junction, by diffusing n-type impurity (arsenic). Thin metal contact layers are deposited directly on silicon chip surfaces into annular windows provided in insulating layers above location of main and compensating p-n junctions and then thick contact lugs are electroplated above metal contact layers. EFFECT: provision for dispensing with local epitaxial growth of thick doped-silicon layers. 2 cl, 6 dwg