LOW-RESISTANCE CONTACT TO SILICON SOLAR CELL Russian patent published in 1996 - IPC

FIELD: electronic equipment; can be used in photoelectric power, mainly in solar cells at conversion of high-density radiation. SUBSTANCE: low-resistance contact uses a transition layer of nickel silicide, 0.02 to 0.08 um thick; nickel layer 0.2 to 1.0 um thick; copper layer 3 to 8 um thick; and a layer of tin-containing solder, 3 to 10 um thick. Nickel silicide provides for a low contact resistance of the contact; the nickel layer serves as a shield against diffusion of copper to silicon; the copper layer provides for a low resistance of the contact. EFFECT: enhanced efficiency. 1 dwg