FIELD: microelectronics. SUBSTANCE: layer of base metal 0.2-2.5 μ is claded on surface of semiconductor plate and necessary pattern is formed by means of photoresist. Second layer of metal of protective coat 0.5-30.0 m thick is applied to unprotected surfaces. Plates are chemically cut into crystals. Side surfaces of crystals are protected with compound and chemical treatment of upper layer of metal is performed. EFFECT: facilitated manufacture. 8 cl, 1 tbl
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