FIELD: microelectronics. SUBSTANCE: layer of base metal of VI-VIII groups or of their alloy 0.2-2.5 μ thick is applied to surface of semiconductor plates, protective layer of metal 0.5-30.0 m thick is applied over it. After cutting of plate into crystals and rinsing in etching agent protection of side surface of crystals with compound and chemical working of metal of upper layer are conducted. EFFECT: improved efficiency of process. 8 cl, 1 tbl
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