FIELD: semiconductor engineering. SUBSTANCE: resistive-contact metal is applied to semiconductor strip with formed structures of semiconductor devices and shielding metal coat is made on top. Semiconductor strip is mechanically divided into chips. Side surfaces formed in the process are covered with protective polymeric compound, shielding metal is chemically removed. Base metals of groups IY-YIII and their alloys are used as resistive-contact metals. EFFECT: facilitated procedure. 3 cl, 1 tbl
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