METHOD OF MAKING PHOTOVOLTAIC CELL Russian patent published in 2010 - IPC H01L31/18 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to optoelectronics and can be used as a silicon photocell for converting radiation energy to electric energy. The method of making a photovoltaic cell in which the working area of the photodiode and an anti-refraction coating are made through formation of a Schottky barrier by depositing a nickel film on n-type silicon with subsequent annealing at temperature ranging from 350 to 450°C for 30-60 minutes. Contacts to the working area of the photodiode are made either before annealing by depositing an array of electrodes from a noble metal (gold, platinum) onto a nickel surface or after annealing by depositing an array of nickel electrodes via a lithographic process with local NiO etching.

EFFECT: method of making a photovoltaic cell enables reduction of the number of process steps, that way reducing the cost of making solar module, while maintaining key characteristics such as efficiency and fill factor at the level of modern silicon photovoltaic cells.

3 cl, 1 ex