SEMICONDUCTOR CHIP MANUFACTURING PROCESS Russian patent published in 1994 - IPC

Abstract RU 2012094 C1

FIELD: semiconductor engineering. SUBSTANCE: resistive-contact metal layer is applied to surface of semiconductor strip with shaped structures of semiconductor devices. Photoresist mask is formed on this layer along dividing tracks. Mechanical shielding layer is applied to vacant sections. Photoresist mask is removed. Strip is chemically separated into chips. Side surfaces formed in the process are covered with protective polymeric compound, shielding metal is chemically removed. Base metals of groups IY-YIII or their alloys are used as resistive- contact metals. EFFECT: facilitated procedure. 3 cl, 1 tbl

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RU 2 012 094 C1

Authors

Kolomitskij Nikolaj Grigor'Evich

Astapov Boris Aleksandrovich

Dates

1994-04-30Published

1992-04-15Filed