FIELD: semiconductor engineering. SUBSTANCE: resistive-contact metal layer is applied to surface of semiconductor strip with shaped structures of semiconductor devices. Photoresist mask is formed on this layer along dividing tracks. Mechanical shielding layer is applied to vacant sections. Photoresist mask is removed. Strip is chemically separated into chips. Side surfaces formed in the process are covered with protective polymeric compound, shielding metal is chemically removed. Base metals of groups IY-YIII or their alloys are used as resistive- contact metals. EFFECT: facilitated procedure. 3 cl, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
PROCESS OF MANUFACTURE OF SEMICONDUCTOR CRYSTALS | 1992 |
|
RU2035086C1 |
SEMICONDUCTOR CHIP MANUFACTURING PROCESS | 1992 |
|
RU2012095C1 |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR CRYSTALS | 1992 |
|
RU2035085C1 |
METHOD OF MAKING PHOTOCONVERTER WITH INTEGRATED DIODE | 2012 |
|
RU2515420C2 |
METHOD OF MAKING PHOTOCONVERTER CONTACTS | 2007 |
|
RU2357326C1 |
METHOD FOR MANUFACTURING CRYSTALS FOR POWER SEMICONDUCTOR DEVICES | 2017 |
|
RU2674409C1 |
METHOD OF MANUFACTURING OPEN FRAME DIODE FOR SOLAR CELLS OF SPACE VEHICLES | 2017 |
|
RU2656126C1 |
SOLAR CELL | 0 |
|
SU1790015A1 |
PROCESS OF MANUFACTURE OF FIELD-EFFECT TRANSISTORS WITH SCOTT GATE MADE OF GALLIUM ARSENIDE | 1992 |
|
RU2068211C1 |
METHOD FOR PRODUCING MAGNETOELECTRIC STRUCTURES | 2017 |
|
RU2682504C1 |
Authors
Dates
1994-04-30—Published
1992-04-15—Filed