POWER BIPOLAR TRANSISTOR Russian patent published in 1996 - IPC

Abstract RU 2065643 C1

FIELD: semiconductor equipment, in particular, constructions of power bipolar transistors with an enhanced area of safe operation. SUBSTANCE: a highly doped zone is created in the space between the emitter edge and base contact so that the distance from the emitter edge to the boundary of the highly doped base zone decreases in the direction from the common emitter wire to the end of the emitter prong. The transistor structure has an emitter wire, emitter prongs, floating emitter located between the base contact and emitter edge and having an invariable width along the emitter prong, highly doped base zone; part of the base zone has a usual level of doping. EFFECT: enhanced reliability. 2 dwg

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RU 2 065 643 C1

Authors

Gordeev A.I.

Nasejkin V.O.

Korolev A.F.

Levin A.A.

Dates

1996-08-20Published

1993-02-10Filed