FIELD: semiconductor equipment, in particular, constructions of power bipolar transistors with an enhanced area of safe operation. SUBSTANCE: a highly doped zone is created in the space between the emitter edge and base contact so that the distance from the emitter edge to the boundary of the highly doped base zone decreases in the direction from the common emitter wire to the end of the emitter prong. The transistor structure has an emitter wire, emitter prongs, floating emitter located between the base contact and emitter edge and having an invariable width along the emitter prong, highly doped base zone; part of the base zone has a usual level of doping. EFFECT: enhanced reliability. 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| POWERFUL BIPOLAR TRANSISTOR | 1993 |
|
RU2056674C1 |
| POWERFUL BIPOLAR TRANSISTOR | 1996 |
|
RU2127469C1 |
| METHOD OF MANUFACTURING POWERFUL SILICON &&& -P- &&& TRANSISTORS | 0 |
|
SU1114242A1 |
| METHOD OF MANUFACTURING POWERFUL HF AND MICROWAVE TRANSISTORS | 0 |
|
SU1163763A1 |
| HEAVILY-DOPED TRANSISTOR | 0 |
|
SU1787296A3 |
| TRANSISTOR WITH OVERVOLTAGE PROTECTION | 1991 |
|
RU2037237C1 |
| POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE | 2020 |
|
RU2743673C1 |
| POWERFUL RF AND MICROWAVE TRANSISTOR STRUCTURE | 2022 |
|
RU2791863C1 |
| HEAVY-POWER MICROWAVE TRANSISTOR STRUCTURE | 2002 |
|
RU2216071C1 |
| HEAVY-POWER MICROWAVE TRANSISTOR | 2002 |
|
RU2216072C1 |
