HEAVY-POWER MICROWAVE TRANSISTOR Russian patent published in 2003 - IPC

FIELD: semiconductor electronics. SUBSTANCE: transistor has N transistor structures each incorporating collector, base, and emitter zones with minimal distances between centers of emitter zone fragments, as well as ballast resistor contacting metallized emitter zone on one end and metallized pad for connecting emitter conductor, on opposite end. At least one ballast resistor has depressions whose width at points where ballast resistor contacts metallized emitter zone does not exceed one third of emitter zone multiplication pitch. Desired values of resistor can be attained by varying number and geometry of these depressions and requirements to lengths of resistors with structurally specified difference in resistances make it possible to reduce surface areas of transistor structures due to reducing minimal length and difference in lengths of resistors. EFFECT: reduced collector-to-emitter transfer capacitance and available collector capacitance. 1 cl, 2 dwg