HEAVY-POWER MICROWAVE TRANSISTOR STRUCTURE Russian patent published in 2003 - IPC

FIELD: semiconductor electronics. SUBSTANCE: microwave transistor structure has collector, base, and emitter zones with minimal distance between centers of emitter zone fragments, as well as ballast resistor contacting metallized emitter zone on one end and metallized pad for connecting emitter conductor, on opposite end. Ballast resistor is divided into sections whose total area is smaller than resistor area and distance between contacts of adjacent sections with metallized emitter zone does not exceed one third of emitter zone multiplication pitch. Desired resistor values are obtained by varying number and geometry of sections thereby ensuring reduction in its length and in transistor structure area. EFFECT: reduced collector-to-emitter transfer capacitance and available transistor capacity. 1 cl, 2 dwg