METHOD OF FABRICATING THIN-FILM RESISTORS Russian patent published in 2008 - IPC H01C17/00 

Abstract RU 2327241 C1

FIELD: electronic engineering.

SUBSTANCE: in fabrication of thin-film-resistors, their parameters are stabilised by thermal treatment in a furnace as follows, i.e. first, the furnace temperature with the resistors is increased to (345 to 365)°C, then it is held for 3 hours, now the resistors and the furnace are cooled to (18 to 25)°C, again, they heated to (375 to 385)°C, held for 2 hours, and, again both are cooled to (18 to 25)°C.

EFFECT: increased yield of finished resistors.

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RU 2 327 241 C1

Authors

Chipurin Vladimir Ivanovich

Semenov Igor' Alekseevich

Dates

2008-06-20Published

2007-01-30Filed