HIGH-TEMPERATURE SEMICONDUCTOR STRAIN GAGE Russian patent published in 2017 - IPC G01B1/00 

FIELD: electricity.

SUBSTANCE: high-temperature semiconductor strain gage comprises a strain-sensitive film formed of polycrystalline samarium monosulfide coupled to metal contact pads and arranged to interact with the tested object, wherein the strain-sensitive film is formed directly on the surface of the tested object and has a fine-grained defect structure with hopping conductivity.

EFFECT: reduction of voltage distortion, increase in reliability and durability of the structure, increase in operating temperature, reduction in the size of the strain gage, reduction in the mass of the elements.

3 cl, 2 dwg