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2 089 972

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C1

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IPC

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Application

95120482/25, 1995-12-04

(22)

Actual filing date

1995-12-04

(45)

Published

1997-09-10

(72)

Inventor

Volodin N.M.Kostjukevich E.V.Smertenko P.S.Khanova A.V.Khanov Ju.A.

(73)

Holder

Nauchno-Proizvodstvennoe Ob"Edinenie Im.S.A.Lavochkina

METHOD FOR PRODUCING INJECTING CONTACT TO SAMARIUM MONOSULFIDE Russian patent published in 1997 - IPC

Abstract RU 2089972 C1

FIELD: metallizing samarium monosulfide base semiconductor devices. SUBSTANCE: double-layer metal coat is applied to samarium monosulfide substrate ar substrate temperature of 100-200 C and at a rate of 10-20; first layer (chromium) is deposited directly on substrate for 50-100 s and second one, (cobalt), on chromium layer for 300-400 s. EFFECT: facilitated procedure. 2 dwg, 7 tbl

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RU 2 089 972 C1

Authors

Volodin N.M.

Kostjukevich E.V.

Smertenko P.S.

Khanova A.V.

Khanov Ju.A.

Dates

1997-09-10—Published

1995-12-04—Filed

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