BOUNDED SEMICONDUCTOR STRAIN GAUGE Russian patent published in 2012 - IPC H01L29/84 G01B7/16 

FIELD: electricity.

SUBSTANCE: semiconductor strain gauge contains a polymer substrate 1, a carrier 2 made of thin (3÷10 mcm) metal (constantan) foil, a dielectric separating film 3 (SiO) formed on the carrier 2 and a strain-sensitive film 4 (on the film 3) of samarium monosulphide (SmS) with a thickness of 0.5÷1 mcm. The carrier 2 represents two pads 5 connected with strings 6 the width whereof is equal to 50÷200 mcm (lattice shape). The dielectric film 3 and the strain-sensitive film 4 sedimented on the carrier 2 also repeat the carrier shape. The contacts 7 are made of nickel with a thickness of 1÷2 mcm and are partly formed on the pads 5 and partly - on the strings 7 of the strain-sensitive film 4 shunting the latter. The unshunted parts of the strain-sensitive film 4 strings 6, properly representing the resistors, are electrically-connected parallel to each other. The polymer substrate 1 (lacquer VL-931 with a thickness of 20÷30 mcm) is formed on the reverse side of the carrier 2. The length of sections 8 of the metal contacts 7 located on the strings 6 is identical or varied from one string to another according to a nonlinear or nonlinear law.

EFFECT: enhancement of axial sensitivity to deformation, reduction of transversal sensitivity and ensuring the possibility of the strain gauge electric resistance reduction and modification after bonding by way of strings breakage.

3 cl, 8 dwg