FIELD: physics.
SUBSTANCE: method for production of Cu2ZnSnS4 layer is realised in two stages, on the first stage of which basic layer of metal components, and/or sulfides is applied onto substrate with conducting contact by methods of vacuum sputtering with atomic ratio of components required for synthesised compound, and at the second stage produced structure is sulfidised. Metal layers are sulfidised in atmosphere created by continuous flow of inertial gas and vapours of sulphur from the source unlimited for the time of reaction, at the temperature of 220-450°C for the time required for synthesis of single phase layer of Cu2ZnSnS4 compound.
EFFECT: production of layers Cu2ZnSnS4 with specified physical characteristics (crystalline structure, phase composition, surface morphology, width of prohibited zone, etc) by simplification of production technology and increase of process ecological safety.
2 dwg
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Authors
Dates
2009-02-20—Published
2007-07-28—Filed